| PART |
Description |
Maker |
| AP2121N-3.0TRE1 AP2121N-3.3TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
http://
|
| AP2122AK-1.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR 高速，超低噪音LDO稳压
|
BCD Semiconductor Manufacturing, Ltd.
|
| AP212909 AP2129K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manuf...
|
| P500-G200-WH P850-G200-WH P850-G120-WH P500-G120-W |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2312 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2303 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2302 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
